Результаты поиска 25AA080DT-I/MNY
Найдено 3 результатов.
- Infineon Technologies — Infineon Technologies BAS3007A-RPP Configuration: bridge Diode Type: Schottky Forward Current If(av): 900mA Forward Surge Current Ifsm Max: 5A Forward Voltage Vf Max: 400mV If (max): 900.0 mA Ir (max): 350.0 ВµA Operating Temperature Range: -65°C To +125°C Packages: SOT143-4-10 Repetitive Reverse Voltage Vrrm Max: 21V Vf (max): 0.6 V Vr (max): 30.0 V
- Microchip Technology — Microchip Technology 25AA080DT-I/MNY Format - Memory: EEPROMs - Serial ID_COMPONENTS: 652424 Interface: SPI, 3-Wire Serial Memory Size: 8K (1K x 8) Memory Type: EEPROM Operating Temperature: -40В°C ~ 85В°C Package / Case: 8-TDFN Series: - Speed: 3MHZ, 5MHZ, 10MHZ Voltage - Supply: 1.8 V ~ 5.5 V Product Category: EEPROM RoHS: yes Organization: 1 K x 8 Data Retention: 200 yr Maximum Clock Frequency: 10 MHz Maximum Operating Current: 5 mA Operating Supply Voltage: 2.5 V, 3.3 V, 5 V Maximum Operating Temperature: + 85 C Mounting Style: SMD/SMT Access Time: 160 ns Interface Type: SPI Minimum Operating Temperature: - 40 C Operating Current: 5 mA Factory Pack Quantity: 3300 Supply Voltage - Max: 5.5 V Supply Voltage - Min: 1.8 V Other Names: 25AA080DT-I/MNYTR
- Microchip Technology — Microchip Technology 25AA080DT-I/MNY Format - Memory: EEPROMs - Serial ID_COMPONENTS: 652424 Interface: SPI, 3-Wire Serial Memory Size: 8K (1K x 8) Memory Type: EEPROM Operating Temperature: -40В°C ~ 85В°C Package / Case: 8-TDFN Series: - Speed: 3MHZ, 5MHZ, 10MHZ Voltage - Supply: 1.8 V ~ 5.5 V Product Category: EEPROM RoHS: yes Organization: 1 K x 8 Data Retention: 200 yr Maximum Clock Frequency: 10 MHz Maximum Operating Current: 5 mA Operating Supply Voltage: 2.5 V, 3.3 V, 5 V Maximum Operating Temperature: + 85 C Mounting Style: SMD/SMT Access Time: 160 ns Interface Type: SPI Minimum Operating Temperature: - 40 C Operating Current: 5 mA Factory Pack Quantity: 3300 Supply Voltage - Max: 5.5 V Supply Voltage - Min: 1.8 V Other Names: 25AA080DT-I/MNYTR