Результаты поиска 1PS59SB10,115
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- NXP Semiconductors — NXP Semiconductors 1PS59SB10,115 Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (io): 200mA (DC) Current - Reverse Leakage @ Vr: 2ВµA @ 25V Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SC-59-3, SMT3, SOT-346, TO-236 Reverse Recovery Time (trr): 5ns Series: - Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Dc Reverse (vr) (max): 30V Voltage - Forward (vf) (max) @ If: 800mV @ 100mA Product: Schottky Diodes Peak Reverse Voltage: 30 V Forward Continuous Current: 0.2 A Max Surge Current: 0.6 A Configuration: Single Recovery Time: 5 ns Forward Voltage Drop: 0.8 V at 0.1 A Maximum Reverse Leakage Current: 2 uA Operating Temperature Range: - 65 C to + 125 C Mounting Style: SMD/SMT Factory Pack Quantity: 3000 Other Names: 1PS59SB10 T/R, 934042890115