Результаты поиска 1812CA392JAT1A

Найдено 32 результатов.

  • Infineon Technologies —
  • Infineon Technologies — Infineon Technologies FF450R12ME3 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 1.7 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 600 A Gate To Emitter Voltage (max): В±20V Gate-emitter Leakage Current: 400 nA Housing: EconoDUALв„ў 3 Ic (max): 450.0 A Lead Free Status / Rohs Status: Compliant Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: EconoDUAL-3 Power Dissipation: 2100 W Technology: IGBT3 Vce(sat) (typ): 1.7 V RoHS: yes Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 600 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 12
  • Infineon Technologies — Infineon Technologies FF450R12ME3 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 1.7 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 600 A Gate To Emitter Voltage (max): В±20V Gate-emitter Leakage Current: 400 nA Housing: EconoDUALв„ў 3 Ic (max): 450.0 A Lead Free Status / Rohs Status: Compliant Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: EconoDUAL-3 Power Dissipation: 2100 W Technology: IGBT3 Vce(sat) (typ): 1.7 V RoHS: yes Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 600 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 12
  • Infineon Technologies — Infineon Technologies FF450R12ME3 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 1.7 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 600 A Gate To Emitter Voltage (max): В±20V Gate-emitter Leakage Current: 400 nA Housing: EconoDUALв„ў 3 Ic (max): 450.0 A Lead Free Status / Rohs Status: Compliant Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: EconoDUAL-3 Power Dissipation: 2100 W Technology: IGBT3 Vce(sat) (typ): 1.7 V RoHS: yes Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 600 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 12
  • Infineon Technologies — Infineon Technologies FF300R12ME4 RoHS: yes Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 450 A Gate-Emitter Leakage Current: 0.4 uA Power Dissipation: 1.6 kW Maximum Operating Temperature: + 125 C Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw
  • Infineon Technologies — Infineon Technologies FF300R12ME4 RoHS: yes Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 450 A Gate-Emitter Leakage Current: 0.4 uA Power Dissipation: 1.6 kW Maximum Operating Temperature: + 125 C Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw
  • Infineon Technologies — Infineon Technologies FF300R12ME4 RoHS: yes Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 450 A Gate-Emitter Leakage Current: 0.4 uA Power Dissipation: 1.6 kW Maximum Operating Temperature: + 125 C Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw
  • Infineon Technologies — Infineon Technologies FF300R12ME4 RoHS: yes Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 450 A Gate-Emitter Leakage Current: 0.4 uA Power Dissipation: 1.6 kW Maximum Operating Temperature: + 125 C Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw
  • Infineon Technologies — Infineon Technologies FF300R12ME3 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 500 A Gate To Emitter Voltage (max): В±20V Housing: EconoDUALв„ў 3 ID_COMPONENTS: 3671783 Ic (max): 300.0 A Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: Econo D Technology: IGBT3 Vce(sat) (typ): 1.7 V
  • Infineon Technologies — Infineon Technologies FF300R12ME3 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 500 A Gate To Emitter Voltage (max): В±20V Housing: EconoDUALв„ў 3 ID_COMPONENTS: 3671783 Ic (max): 300.0 A Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: Econo D Technology: IGBT3 Vce(sat) (typ): 1.7 V