Результаты поиска 06033A431JAT2A

Найдено 5 результатов.

• IPD65R600E6
  Infineon Technologies — Infineon Technologies IPD65R600E6 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 7.3 A Resistance Drain-Source RDS (on): 0.54 Ohms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252 Minimum Operating Temperature: - 55 C Power Dissipation: 63 W Part # Aliases: IPD65R600E6BTMA1 IPD65R600E6XT SP000800216
• IPD65R600C6
  Infineon Technologies — Infineon Technologies IPD65R600C6 Configuration: Single Continuous Drain Current: 7.3 A Drain-source Breakdown Voltage: 700 V Fall Time: 13 nS Gate Charge Qg: 23 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Part # Aliases: IPD65R600C6BTMA1 IPD65R600C6XT SP000745020 Power Dissipation: 63 W Resistance Drain-source Rds (on): 0.6 Ohms at 10 V Rise Time: 9 nS Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 80 nS RoHS: yes Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.6 Ohms at 10 V Typical Turn-Off Delay Time: 80 nS
• IPD65R600C6
  Infineon Technologies — Infineon Technologies IPD65R600C6 Configuration: Single Continuous Drain Current: 7.3 A Drain-source Breakdown Voltage: 700 V Fall Time: 13 nS Gate Charge Qg: 23 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Part # Aliases: IPD65R600C6BTMA1 IPD65R600C6XT SP000745020 Power Dissipation: 63 W Resistance Drain-source Rds (on): 0.6 Ohms at 10 V Rise Time: 9 nS Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 80 nS RoHS: yes Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.6 Ohms at 10 V Typical Turn-Off Delay Time: 80 nS
• 06033A431JAT2A
  AVX Corporation — CAP CER 430PF 25V NP0 0603
• IPD65R600E6ATMA1
  Infineon Technologies — Infineon Technologies IPD65R600E6ATMA1 Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 7.3 A Rds On: 0.54 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Fall Time: 11 ns Gate Charge Qg: 23 nC Minimum Operating Temperature: - 55 C Power Dissipation: 28 W Rise Time: 8 ns Series: XPD65R600 Typical Turn-Off Delay Time: 64 ns Part # Aliases: SP001117096