Результаты поиска 2N7000

Найдено 101 результатов.

• TSM2N7000CT
  TSC (Taiwan Semiconductor Corporation) — TSC (Taiwan Semiconductor Corporation) TSM2N7000CT Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.2 A Resistance Drain-Source RDS (on): 5300 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-92-3 Fall Time: 10 ns Minimum Operating Temperature: - 55 C Power Dissipation: 350 mW Rise Time: 10 ns Factory Pack Quantity: 2000 Part # Aliases: A3
• TSM2N7000CT
  TSC (Taiwan Semiconductor Corporation) — TSC (Taiwan Semiconductor Corporation) TSM2N7000CT Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.2 A Resistance Drain-Source RDS (on): 5300 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-92-3 Fall Time: 10 ns Minimum Operating Temperature: - 55 C Power Dissipation: 350 mW Rise Time: 10 ns Factory Pack Quantity: 2000 Part # Aliases: A3
• 2N7000G-T92-K
  UTC [Unisonic Technologies] — N-CHANNEL ENHANCEMENT MODE
• 2N7000G-T92-R
  UTC [Unisonic Technologies] — N-CHANNEL ENHANCEMENT MODE
• 2N7000L-T92-B
  UTC [Unisonic Technologies] — N-CHANNEL ENHANCEMENT MODE
• 2N7000L-T92-K
  UTC [Unisonic Technologies] — N-CHANNEL ENHANCEMENT MODE
• 2N7000L-T92-R
  UTC [Unisonic Technologies] — N-CHANNEL ENHANCEMENT MODE
• TSM2N7000_07
  TSC [Taiwan Semiconductor Company, Ltd] — 60V N-Channel MOSFET
• 2N7000-ND26Z
  Fairchild Semiconductor — Fairchild Semiconductor 2N7000-ND26Z Mfr Package Description: LEAD FREE, TO-92, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: MATTE TIN Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.4000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2000 A Feedback Cap-Max (Crss): 5 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 5 ohm
• 2N7000-ND26Z
  Fairchild Semiconductor — Fairchild Semiconductor 2N7000-ND26Z Mfr Package Description: LEAD FREE, TO-92, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: MATTE TIN Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.4000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2000 A Feedback Cap-Max (Crss): 5 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 5 ohm