Результаты поиска 2N7000

Найдено 101 результатов.

• TSM2N7000K
  TSC (Taiwan Semiconductor Corporation) —
• TSM2N7000K
  TSC (Taiwan Semiconductor Corporation) —
• 2N7000-TR1
  Vishay Intertechnology — Vishay Intertechnology 2N7000-TR1 Mfr Package Description: PLASTIC, TO-92, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: WIRE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.8300 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.3000 A DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 5 ohm
• 2N7000RLRPG
  ON Semiconductor — MOSFETs- Power and Small Signal 60V 200mA N-Channel
• 2N7000RLRMG
  ON Semiconductor — MOSFETs- Power and Small Signal 60V 200mA N-Channel
• 2N7000RLRAG
  ON Semiconductor — MOSFETs- Power and Small Signal 60V 200mA N-Channel
• 2N7000RLRAG
  ON Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000RLRAG
  ON Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000RLRMG
  ON Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000RLRPG
  ON Semiconductor — MOSFET N-CH 60V 200MA TO-92