Результаты поиска BC817-40

Найдено 80 результатов.

• BC817-40,235
  Philips Semiconductors — Philips Semiconductors BC817-40,235 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 250 at 100 mA at 1 V, 40 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 250 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 BC817-40
• BC817-40,215
  Philips Semiconductors — Philips Semiconductors BC817-40,215 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 250 at 100 mA at 1 V, 40 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 250 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC817-40 T/R
• SBC817-40LT1
  ON Semiconductor —
• BC817-40.215
  NXP Semiconductors — NXP Semiconductors BC817-40.215 Collector Emitter Voltage V(br)ceo: 45V Dc Collector Current: 500mA Dc Current Gain Hfe: 250 No. Of: RoHS Compliant Operating Temperature Range: -65°C To +150°C Power Dissipation Pd: 250mW Rohs Compliant: Yes Transistor Case Style: SOT-23 Transistor Polarity: NPN
• BC817-40,235
  NXP Semiconductors — Philips Semiconductors BC817-40,235 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 250 at 100 mA at 1 V, 40 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 250 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 BC817-40
• BC817-40,215
  NXP Semiconductors — Philips Semiconductors BC817-40,215 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 250 at 100 mA at 1 V, 40 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 250 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC817-40 T/R
• BC817-40 /T3
  NXP Semiconductors — NXP Semiconductors BC817-40 /T3 Collector- Base Voltage Vcbo: 50 V Collector- Emitter Voltage Vceo Max: 45 V Collector-emitter Saturation Voltage: 5 V Configuration: Single Continuous Collector Current: 0.5 A Dc Collector/base Gain Hfe Min: 250 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 10000 Gain Bandwidth Product Ft: 100 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-23 Part # Aliases: BC817-40,235 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN
• LBC817-40LT1
  LRC (Leshan Radio Company) —
• BC817-40W/T1
  Infineon Technologies —
• BC817-40S62Z
  TI (Texas Instruments) — Fairchild Semiconductor BC817-40S62Z Mfr Package Description: SOT-23, 3 PIN Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.3100 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 170 Collector Current-Max (IC): 0.8000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 100 MHz