Результаты поиска J309

Найдено 157 результатов.

• MMBFJ309LT1G
  ON Semiconductor — JFETs 25V 10mA
• MMBFJ309LT1G
  ON Semiconductor — JFET SS N-CHAN 25V SOT23
• MMBFJ309LT1G
  ON Semiconductor — JFET SS N-CHAN 25V SOT23
• MMBFJ309LT1G
  ON Semiconductor — JFET SS N-CHAN 25V SOT23
• MMBFJ309LT1-D
  ON Semiconductor — JFET - VHF/UHF Amplifier Transistor N-Channel
• PMBFJ309,215
  NXP Semiconductors — NXP Semiconductors PMBFJ309,215 Configuration: Single Drain Current (idss At Vgs=0): 12 mA to 30 mA Drain Source Voltage Vds: 25 V Gate-source Breakdown Voltage: - 25 V Gate-source Cutoff Voltage: - 4 V ID_COMPONENTS: 1949143 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: - 25 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 250 mW Resistance Drain-source Rds (on): 50 Ohms Transistor Polarity: N-Channel Other Names: 934008990215::PMBFJ309 T/R::PMBFJ309 T/R
• PMBFJ309,215
  NXP Semiconductors — NXP Semiconductors PMBFJ309,215 Configuration: Single Drain Current (idss At Vgs=0): 12 mA to 30 mA Drain Source Voltage Vds: 25 V Gate-source Breakdown Voltage: - 25 V Gate-source Cutoff Voltage: - 4 V ID_COMPONENTS: 1949143 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: - 25 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 250 mW Resistance Drain-source Rds (on): 50 Ohms Transistor Polarity: N-Channel Other Names: 934008990215::PMBFJ309 T/R::PMBFJ309 T/R
• PMBFJ309 T/R
  NXP Semiconductors — NXP Semiconductors PMBFJ309 T/R Configuration: Single Drain Source Voltage Vds: 25 V Gate-source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: - 25 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: N-Channel Other Names: PMBFJ309,215
• BTB1412J3_09
  CYStech Electonics —
• BTB1184J3_09
  CYStech Electonics —