Результаты поиска BAV23
Найдено 78 результатов.
- ON Semiconductor —
- NXP Semiconductors —
- NXP Semiconductors — NXP Semiconductors BAV23S212 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Number of Elements: 2 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.2500 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0500 us Rep Pk Reverse Voltage-Max: 250 V
- NXP Semiconductors — NXP Semiconductors BAV23,235 Configuration: Dual Parallel Current - Average Rectified (io) (per Diode): 225mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 200V Diode Configuration: 2 Independent Diode Type: Standard Forward Continuous Current: 0.225 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 3594691 Max Surge Current: 9 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 100 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOT-143, SOT-143B, TO-253AA Peak Reverse Voltage: 250 V Product: Switching Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 200V Voltage - Forward (vf) (max) @ If: 1V @ 100mA Lifecycle Status: Active Alternative: PHILIPS BAV23,235,NXP BAV23,235,PHIL BAV23,235,PHILLIPS BAV23,235,PHI BAV23,235,PHILIP BAV23,235,PHILIPS/NXP BAV23,235,PHILIPS SEMICONDUCTORS BAV23,235,Philips Semiconductor BAV23,235,PHILIPS SEMI BAV23,235,PHILPS BAV23,235,PHILIPS COMPONENTS BAV23,235,NXP SEMI BAV23,235,PHL BAV23,235,NXP/PHILIPS BAV23,235,PHY BAV23,235,PHILIPS ECG BAV23,235,PHLIPS BAV23,235,ERO BAV23,235,PHILL BAV23,235,PHYC BAV23,235,PHILLIP BAV23,235,PHIL/SIG BAV23,235,PHILI BAV23,235,RFT BAV23,235,Philips Semiconductors BAV23,235 Other Names: 933720770235, BAV23 /T3
- NXP Semiconductors — NXP Semiconductors BAV23,215 Configuration: Dual Parallel Current - Average Rectified (io) (per Diode): 225mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 200V Diode Configuration: 2 Independent Diode Type: Standard Forward Continuous Current: 0.225 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942106 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 9 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 100 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOT-143, SOT-143B, TO-253AA Peak Reverse Voltage: 250 V Product: Switching Diodes Quantity: 120 Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 200V Voltage - Forward (vf) (max) @ If: 1V @ 100mA Other Names: 568-1620-2, 933720770215, BAV23 T/R
- Fairchild Semiconductor —
- Fairchild Semiconductor — Fairchild Semiconductor BAV23S-NL Package: SOT-23 Mfr Package Description: TO-236AB, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Number of Elements: 2 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.3500 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0500 us Rep Pk Reverse Voltage-Max: 250 V Average Forward Current-Max: 0.2000 A
- Fairchild Semiconductor — Fairchild Semiconductor BAV23S-NL Package: SOT-23 Mfr Package Description: TO-236AB, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Number of Elements: 2 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.3500 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0500 us Rep Pk Reverse Voltage-Max: 250 V Average Forward Current-Max: 0.2000 A
- NXP [NXP Semiconductors] — Dual high-voltage switching diodes
- ON Semiconductor — DIODE SW CC DUAL 250V SOT23-3