Результаты поиска MJE13005
Найдено 38 результатов.
- UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
- UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
- UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
- UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
- UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
- UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
- Central Semiconductor — Power Transistors NPN Fast SW
- Central Semiconductor — Central Semiconductor MJE13005 LEADFREE Collector- Base Voltage Vcbo: 9 V Collector- Emitter Voltage Vceo Max: 400 V Collector-emitter Saturation Voltage: 400 V Continuous Collector Current: 4 A Dc Collector/base Gain Hfe Min: 10 Emitter- Base Voltage Vebo: 9 V Factory Pack Quantity: 400 Gain Bandwidth Product Ft: 4 MHz Maximum Dc Collector Current: 4 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 75 W Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Package / Case: TO-220AB Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 9 V Collector- Emitter Voltage VCEO Max: 400 V Emitter- Base Voltage VEBO: 9 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 4 MHz DC Collector/Base Gain hfe Min: 10