Результаты поиска BSS123

Найдено 83 результатов.

• BSS123LT1
  ON Semiconductor — MOSFET N-CH 100V 170MA SOT-23
• BSS123LT3
  ON Semiconductor — MOSFET N-CH 100V 170MA SOT-23
• BSS123235
  NXP Semiconductors — NXP Semiconductors BSS123235 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1500 A Feedback Cap-Max (Crss): 10 pF DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 6 ohm
• BSS123_10
  Infineon Technologies —
• BSS123_NL
  Fairchild Semiconductor — Fairchild Semiconductor BSS123_NL Mfr Package Description: SOT-23, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1700 A Feedback Cap-Max (Crss): 6 pF DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 10 ohm
• BSS123W_1
  Diodes —
• BSS123_08
  Diodes —
• BSS123ATC
  Diodes — Diodes BSS123ATC Current - Continuous Drain (id) @ 25В° C: 170mA Drain To Source Voltage (vdss): 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 25pF @ 25V Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 360mW Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Series: - Vgs(th) (max) @ Id: 2V @ 1mA
• BSS123(Z)
  Diodes —
• BSS123-13
  Diodes — Diodes BSS123-13 Mfr Package Description: PLASTIC PACKAGE-3 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN LEAD Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1700 A Feedback Cap-Max (Crss): 6 pF DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 10 ohm