Результаты поиска BCX19
Найдено 37 результатов.
- Rohm — Rohm BCX19T216 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.2000 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 35 Collector Current-Max (IC): 0.8000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 100 MHz
- NXP Semiconductors — NXP Semiconductors BCX19,235 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 620mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 at 100 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 100 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 BCX19 Other Names: 933209640235, BCX19 /T3
- NXP Semiconductors — NXP Semiconductors BCX19,215 Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949761 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 620mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933209640215::BCX19 T/R::BCX19 T/R
- TI (Texas Instruments) — TI (Texas Instruments) BCX19D87Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: NPN Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 40
- ON Semiconductor — ON Semiconductor SBCX19LT1G Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Continuous Collector Current: 0.5 A Dc Collector/base Gain Hfe Min: 100 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23-3 Power Dissipation: 300 mW Transistor Polarity: PNP DC Collector/Base Gain hfe Min: 100 Collector- Emitter Voltage VCEO Max: 45 V
- ON Semiconductor — ON Semiconductor SBCX19LT1G Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Continuous Collector Current: 0.5 A Dc Collector/base Gain Hfe Min: 100 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23-3 Power Dissipation: 300 mW Transistor Polarity: PNP DC Collector/Base Gain hfe Min: 100 Collector- Emitter Voltage VCEO Max: 45 V
- NXP Semiconductors — NXP Semiconductors BCX19-40R-TAPE-13 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.2500 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 40 Collector Current-Max (IC): 0.5000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 100 MHz
