Результаты поиска 2N7000
Найдено 101 результатов.
- Vishay Intertechnology —
- UTC [Unisonic Technologies] — N-CHANNEL ENHANCEMENT MODE
- SemeLAB — N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
- Champion Microelectronic Corporation — Small Signal MOSFET
- STMicroelectronics —
- ON Semiconductor —
- ON Semiconductor —
- NXP Semiconductors — NXP Semiconductors 2N7000AMO Mfr Package Description: PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: TIN Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.8300 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.3000 A Feedback Cap-Max (Crss): 10 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 5 ohm
- Fairchild Semiconductor — Fairchild Semiconductor 2N7000_NL Mfr Package Description: LEAD FREE, TO-92, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: NOT SPECIFIED Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.4000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2000 A Feedback Cap-Max (Crss): 5 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 5 ohm
- TSC (Taiwan Semiconductor Corporation) —