Результаты поиска SK34

Найдено 310 результатов.

  • SHIELD [SHIELD s.r.l.] — SK33 distribution box, top mounting 3-pole M8-A sockets, built-in control cable
  • NEC Electronics America — Single MOSFET Single MOSFET Nch
  • NEC Electronics America — Single MOSFET Single MOSFET Nch
  • Renesas Electronics — Renesas Electronics 2SK3408-T1B-A Current - Continuous Drain (id) @ 25В° C: 1A Drain To Source Voltage (vdss): 43V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 4nC @ 10V Input Capacitance (ciss) @ Vds: 230pF @ 10V Mounting Type: Surface Mount Package / Case: * Power - Max: 200mW Rds On (max) @ Id, Vgs: 195 mOhm @ 500mA, 10V Series: - Vgs(th) (max) @ Id: 2.5V @ 1mA
  • Fuji Electric —
  • Toshiba Semiconductor and Storage — MOSF RF N CH 20V 1A PW-MINI
  • Freescale Semiconductor — Freescale Semiconductor MC68L711E9FNE2 Connectivity: SCI, SPI Core Processor: HC11 Core Size: 8-Bit Data Converters: A/D 8x8b Eeprom Size: 512 x 8 Number Of I /o: 38 Operating Temperature: 0В°C ~ 70В°C Oscillator Type: Internal Package / Case: 52-PLCC Peripherals: POR, WDT Program Memory Size: 12KB (12K x 8) Program Memory Type: OTP Ram Size: 512 x 8 Series: HC11 Speed: 2MHz Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
  • Renesas Electronics — Renesas Electronics 2SK3479-Z-E1-AZ Current - Continuous Drain (id) @ 25В° C: 83A Drain To Source Voltage (vdss): 100V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 210nC @ 10V Input Capacitance (ciss) @ Vds: 11000pF @ 10V Mounting Type: Surface Mount Package / Case: * Power - Max: 1.5W Rds On (max) @ Id, Vgs: 11 mOhm @ 42A, 10V Series: - Vgs(th) (max) @ Id: 2.5V @ 1mA
  • Renesas Electronics —
  • Fuji Electric —




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