Результаты поиска 2N5457
Найдено 28 результатов.
- Fairchild Semiconductor — IC AMP GP N-CHAN 25V 10MA TO-92
- Fairchild Semiconductor — IC AMP GP N-CHAN 25V 10MA TO-92
- Fairchild Semiconductor — IC AMP GP N-CHAN 25V 10MA TO-92
- Fairchild Semiconductor — IC AMP GP N-CHAN 25V 10MA TO-92
- Fairchild Semiconductor — Fairchild Semiconductor 2N5457-L99Z Configuration: Single Drain Current (idss At Vgs=0): 1 mA to 5 mA Factory Pack Quantity: 2000 Forward Transconductance Gfs (max / Min): 0.001 S to 0.005 S Gate-source Breakdown Voltage: - 25 V Mounting Style: Through Hole Package / Case: TO-92 Power Dissipation: 625 mW Product Category: JFET Rohs: yes Transistor Polarity: N-Channel
- Fairchild Semiconductor — Fairchild Semiconductor 2N5457-L99Z Configuration: Single Drain Current (idss At Vgs=0): 1 mA to 5 mA Factory Pack Quantity: 2000 Forward Transconductance Gfs (max / Min): 0.001 S to 0.005 S Gate-source Breakdown Voltage: - 25 V Mounting Style: Through Hole Package / Case: TO-92 Power Dissipation: 625 mW Product Category: JFET Rohs: yes Transistor Polarity: N-Channel
- Fairchild Semiconductor — Fairchild Semiconductor 2N5457-L99Z Configuration: Single Drain Current (idss At Vgs=0): 1 mA to 5 mA Factory Pack Quantity: 2000 Forward Transconductance Gfs (max / Min): 0.001 S to 0.005 S Gate-source Breakdown Voltage: - 25 V Mounting Style: Through Hole Package / Case: TO-92 Power Dissipation: 625 mW Product Category: JFET Rohs: yes Transistor Polarity: N-Channel
- TI (Texas Instruments) — TI (Texas Instruments) 2N5457/D26Z Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.6250 W Channel Type: N-CHANNEL FET Technology: JUNCTION Operating Mode: DEPLETION Transistor Type: GENERAL PURPOSE SMALL SIGNAL Feedback Cap-Max (Crss): 3 pF