Результаты поиска SK34

Найдено 310 результатов.

• 2SK3484-ZK
  Renesas Electronics —
• 2SK3483-ZK
  Renesas Electronics —
• 2SK3461L-E
  Renesas Electronics —
• 2SK3403(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3403(Q) Configuration: Single Continuous Drain Current: 13 A Current - Continuous Drain (id) @ 25В° C: 13A Drain To Source Voltage (vdss): 450V Drain-source Breakdown Voltage: 450 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 34nC @ 10V Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 1600pF @ 25V Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-10S1B Power - Max: 100W Power Dissipation: 100 W Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V Resistance Drain-source Rds (on): 0.4 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 450 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.4 Ohms Fall Time: 10 ns Rise Time: 28 ns Factory Pack Quantity: 50
• 2SK3403(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3403(Q) Configuration: Single Continuous Drain Current: 13 A Current - Continuous Drain (id) @ 25В° C: 13A Drain To Source Voltage (vdss): 450V Drain-source Breakdown Voltage: 450 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 34nC @ 10V Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 1600pF @ 25V Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-10S1B Power - Max: 100W Power Dissipation: 100 W Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V Resistance Drain-source Rds (on): 0.4 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 450 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.4 Ohms Fall Time: 10 ns Rise Time: 28 ns Factory Pack Quantity: 50
• 2SK3437(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3437(Q) Current - Continuous Drain (id) @ 25В° C: 10A Drain To Source Voltage (vdss): 600V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 28nC @ 10V Input Capacitance (ciss) @ Vds: 1200pF @ 25V Mounting Type: Through Hole Package / Case: 2-10S1B Power - Max: 80W Rds On (max) @ Id, Vgs: 1 Ohm @ 5A, 10V Series: - Vgs(th) (max) @ Id: 5V @ 1mA
• 2SK3437_06
  TOSHIBA Semiconductor —
• 2SK3437_10
  TOSHIBA Semiconductor —
• 2SK3438_10
  TOSHIBA Semiconductor —
• 2SK3439_06
  TOSHIBA Semiconductor —