Результаты поиска 830C

Найдено 278 результатов.

• S-80830CNUA-B9Z-T2
  SII [Seiko Instruments Inc] — ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
• S-80830CLMC-B6PT2G
  Seiko Instruments — CMOS Voltage Detectors 3.0V 0.8uA CMOS Out
• S-80830CNUA-B8PT2G
  Seiko Instruments — CMOS Voltage Detectors 3.0V 0.8uA N-Ch Open
• S-80830CNMC-B8PT2G
  Seiko Instruments — CMOS Voltage Detectors 3.0V 0.8uA N-Ch Open
• S-80830CNNB-B8PT2G
  Seiko Instruments — CMOS Voltage Detectors 3.0V 1.3uA N-Ch Open
• S-80830CLNB-B6PT2G
  Seiko Instruments — CMOS Voltage Detectors 3.0V 1.3uA CMOS Out
• S-80830CLUA-B6PT2G
  Seiko Instruments — CMOS Voltage Detectors 3.0V 1.3uA CMOS Out
• BUK761R8-30C,118
  NXP Semiconductors — NXP Semiconductors BUK761R8-30C,118 Configuration: Single Continuous Drain Current: 312 A Current - Continuous Drain (id) @ 25?° C: 100A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 150nC @ 10V Gate Charge Qg: 150 nC Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950603 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 333W Power Dissipation: 333 W Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 1.8 mOhms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.8 mOhms Fall Time: 134 ns Rise Time: 110 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 186 ns Other Names: 934060132118
• BUK661R8-30C,118
  NXP Semiconductors — NXP Semiconductors BUK661R8-30C,118 Configuration: Single Continuous Drain Current: 120 A Current - Continuous Drain (id) @ 25?° C: 120A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 168nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 10918pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-263-3, D??Pak (2 leads + Tab), TO-263AB Power - Max: 263W Power Dissipation: 263 W Rds On (max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 1.8 mOhms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.8V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.8 mOhms Factory Pack Quantity: 800
• BUK661R8-30C,118
  NXP Semiconductors — NXP Semiconductors BUK661R8-30C,118 Configuration: Single Continuous Drain Current: 120 A Current - Continuous Drain (id) @ 25?° C: 120A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 168nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 10918pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-263-3, D??Pak (2 leads + Tab), TO-263AB Power - Max: 263W Power Dissipation: 263 W Rds On (max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 1.8 mOhms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.8V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.8 mOhms Factory Pack Quantity: 800