Результаты поиска TLP781(F)
Найдено 21 результатов.
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(Y-TP6F) Configuration: 1 Channel Current Transfer Ratio: 50 % to 150 % Forward Current: 10 mA Isolation Voltage: 5000 Vrms Maximum Collector Emitter Saturation Voltage: 0.4 V Maximum Collector Emitter Voltage: 80 V Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 10 mA Maximum Operating Temperature: + 110 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 5 V Minimum Forward Diode Voltage: 1 V Minimum Operating Temperature: - 55 C Output Device: Phototransistor Package / Case: DIP-4
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(D4-GB,F) RoHS: Compliant Alternative: TOSH TLP781(D4-GB,F),TOS TLP781(D4-GB,F),SMK TLP781(D4-GB,F),TSENG TLP781(D4-GB,F),TOSHIB TLP781(D4-GB,F),TOSHI TLP781(D4-GB,F),TOSHIBA CORP TLP781(D4-GB,F),MARKTECH OPTOELECTRONICS TLP781(D4-GB,F),TSH TLP781(D4-GB,F),TOSHIBA ELECTRONICS TLP781(D4-GB,F),TOBHIBA TLP781(D4-GB,F),TOSHIBA ELECTRONIC COMPONENTS TLP781(D4-GB,F),Toshiba America TLP781(D4-GB,F),TOSHIAB TLP781(D4-GB,F),TOSHIBA ELECTRONICS ASIA LTD TLP781(D4-GB,F),Westcode Semiconductors TLP781(D4-GB,F),TSHBA TLP781(D4-GB,F),Toshiba American Electronic Components Inc TLP781(D4-GB,F),Toshiba Digital Media TLP781(D4-GB,F),Toshiba America Electronic Components TLP781(D4-GB,F),TOSHIBAPb TLP781(D4-GB,F),TOSHIBA (VA) TLP781(D4-GB,F),TOSHIBA AMERICA ELECTRONI TLP781(D4-GB,F),Toshiba America Electronic Components Inc TLP781(D4-GB,F),TOSHIBA AMERICA INC TLP781(D4-GB,F)
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(D4-GB.F) Input Current: 16mA Isolation Voltage: 5kV No. Of Channels: 1 No. Of Pins: 4 Operating Temperature Range: -55°C To +110°C Opto Case Style: DIP Optocoupler Output Type: Phototransistor Output Type: Phototransistor Output Voltage: 80V Package /: RoHS Compliant Rohs Compliant: Yes
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(D4-GR,F) Current - Dc Forward (if): 60mA Current - Output / Channel: 50mA Current Transfer Ratio (max): 300% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Input Type: DC Mounting Type: Through Hole Number Of Channels: 1 Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Series: - Vce Saturation (max): 400mV Voltage - Isolation: 5000Vrms Voltage - Output: 80V Other Names: TLP781D4-GRF
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(GB-LF6,F) Current - Dc Forward (if): 60mA Current - Output / Channel: 10mA Current Transfer Ratio (max): 600% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Input Type: DC Mounting Type: Surface Mount Number Of Channels: 1 Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 5000Vrms Voltage - Output: 80V Other Names: TLP781(GB-LF6-F), TLP781GB-LF6F, TLP781GB-LF6FCT
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(GB-TP6,F) Current - Dc Forward (if): 60mA Current - Output / Channel: 50mA Current Transfer Ratio (max): 600% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Input Type: DC Mounting Type: Surface Mount Number Of Channels: 1 Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 5000Vrms Voltage - Output: 80V Other Names: TLP781GB-TP6FTR
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(GB-TP6F-L Configuration: 1 Channel Current Transfer Ratio: 50 % to 600 % Forward Current: 10 mA Isolation Voltage: 5000 Vrms Maximum Collector Emitter Saturation Voltage: 0.4 V Maximum Collector Emitter Voltage: 80 V Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 10 mA Maximum Operating Temperature: + 110 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 5 V Minimum Forward Diode Voltage: 1 V Minimum Operating Temperature: - 55 C Output Device: Phototransistor Package / Case: DIP-4
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(GR-LF6,F) Configuration: 1 Channel Current - Dc Forward (if): 60mA Current - Output / Channel: 50mA Current Transfer Ratio: 100 % to 300 % Current Transfer Ratio (max): 300% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Forward Current: 10 mA Input Type: DC Isolation Voltage: 5000 Vrms Maximum Collector Emitter Saturation Voltage: 0.4 V Maximum Collector Emitter Voltage: 80 V Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 60 mA Maximum Operating Temperature: + 110 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 5 V Minimum Forward Diode Voltage: 1 V Minimum Operating Temperature: - 55 C Mounting Type: Surface Mount Number Of Channels: 1 Output Device: Phototransistor Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 5000Vrms Voltage - Output: 80V Other Names: TLP781GR-LF6FCT
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(GR-TP6,F) Collector Current (dc) (max): 50mA Collector-emitter Voltage: 80V Current - Dc Forward (if): 60mA Current - Output / Channel: 50mA Current Transfer Ratio: 300% Current Transfer Ratio (max): 300% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Forward Current: 60mA Forward Voltage: 1.3V Input Type: DC Isolation Voltage: 5000Vrms Lead Free Status / Rohs Status: Compliant Mounting: Through Hole Mounting Type: Surface Mount Number Of Elements: 1 Number Of Channels: 1 Operating Temp Range: -25C to 85C Operating Temperature Classification: Commercial Output Device: Transistor Output Type: Transistor Package / Case: 4-SMD Package Type: PDIP Pin Count: 4 Power Dissipation: 250mW Reverse Breakdown Voltage: 5V Series: - Vce Saturation (max): 400mV Voltage - Isolation: 5000Vrms Voltage - Output: 80V Other Names: TLP781GR-TP6FTR
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781(D4-GR-TP6F Configuration: 1 Channel Current Transfer Ratio: 100 % to 300 % Forward Current: 10 mA Isolation Voltage: 5000 Vrms Maximum Collector Emitter Saturation Voltage: 0.4 V Maximum Collector Emitter Voltage: 80 V Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 10 mA Maximum Operating Temperature: + 110 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 5 V Minimum Forward Diode Voltage: 1 V Minimum Operating Temperature: - 55 C Output Device: Phototransistor Package / Case: DIP-4