Результаты поиска RP1608S-R47-J

Найдено 21 результатов.

• IHW40N135R3
  Infineon Technologies —
• IHW40N60T_08
  INFINEON [Infineon Technologies AG] — Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
• IHW40T120_08
  INFINEON [Infineon Technologies AG] — Soft Switching Series
• RP1608S-R47-J
  Susumu — RES SMD 0.47 OHM 5% 1/5W 0603
• SIHW47N65E-GE3
  Siliconix — Siliconix SIHW47N65E-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 47 A Resistance Drain-Source RDS (on): 0.072 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-247AD-3 Fall Time: 103 ns Forward Transconductance gFS (Max / Min): 16.7 S Gate Charge Qg: 273 nC Minimum Operating Temperature: - 55 C Power Dissipation: 417 W Rise Time: 87 ns Typical Turn-Off Delay Time: 156 ns
• SIHW47N60E-GE3
  Siliconix — Vishay Intertechnology SIHW47N60E-GE3 Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 650 V Drain-Source On Resistance-Max: 0.064 О© Qg Gate Charge: 220 nC Rated Power Dissipation: 357 W
• SIHW47N60E-GE3
  Vishay Intertechnology — Vishay Intertechnology SIHW47N60E-GE3 Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 650 V Drain-Source On Resistance-Max: 0.064 О© Qg Gate Charge: 220 nC Rated Power Dissipation: 357 W
• SIHW47N60EF-GE3
  Siliconix — Siliconix SIHW47N60EF-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 47 A Resistance Drain-Source RDS (on): 0.067 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-247AD-3 Fall Time: 58 ns Forward Transconductance gFS (Max / Min): 17 S Gate Charge Qg: 225 nC Minimum Operating Temperature: - 55 C Power Dissipation: 379 W Rise Time: 61 ns Typical Turn-Off Delay Time: 94 ns
• IHW40N65R5XKSA1
  Infineon Technologies — IGBT 650V 80A 230W TO247
• IHW40N135R3FKSA1
  Infineon Technologies — Infineon Technologies IHW40N135R3FKSA1 Collector- Emitter Voltage Vceo Max: 1.35 kV Collector-emitter Saturation Voltage: 1.85 V Continuous Collector Current At 25 C: 80 A Continuous Collector Current Ic Max: 80 A Gate-emitter Leakage Current: 100 nA Maximum Gate Emitter Voltage: 20 V Mounting Style: Through Hole Package / Case: TO-247-3 Part # Aliases: IHW40N135R3 IHW40N135R3XK Power Dissipation: 215 W Rohs: yes