Результаты поиска EC103D1
Найдено 15 результатов.
- Philips Semiconductors — Philips Semiconductors EC103D1,116 Product Category: SCRs RoHS: yes Breakover Current IBO Max: 9 A Rated Repetitive Off-State Voltage VDRM: 400 V Off-State Leakage Current @ VDRM IDRM: 0.1 mA Forward Voltage Drop: 1.35 V Gate Trigger Voltage (Vgt): 0.8 V Maximum Gate Peak Inverse Voltage: 5 V Gate Trigger Current (Igt): 0.012 mA Holding Current (Ih Max): 5 mA Mounting Style: SMD/SMT Package / Case: SOT-54 Factory Pack Quantity: 2000 Part # Aliases: EC103D1 T/R
- NXP Semiconductors — NXP Semiconductors EC103D1,412 Breakover Current Ibo Max: 9 A Current - Gate Trigger (igt) (max): 12ВµA Current - Hold (ih) (max): 5mA Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A Current - Off State (max): 100ВµA Current - On State (it (av)) (max): 500mA Current - On State (it (rms) (max): 800mA Current - On State (it (rms)) (max): 800mA Forward Voltage Drop: 1.2 V Gate Trigger Current (igt): 3 uA Gate Trigger Voltage (vgt): 0.5 V Holding Current (ih Max): 5 mA ID_COMPONENTS: 1948228 Maximum Gate Peak Inverse Voltage: 5 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting Style: Through Hole Mounting Type: Through Hole Off-state Leakage Current @ Vdrm Idrm: 0.05 mA On-state Rms Current (it Rms): 0.8 A Package / Case: TO-92-3 (Standard Body), TO-226 Rated Repetitive Off-state Voltage Vdrm: 400 V Scr Type: Sensitive Gate Voltage - Gate Trigger (vgt) (max): 800mV Voltage - Off State: 400V Voltage - On State (vtm) (max): 1.35V RoHS: yes Breakover Current IBO Max: 9 A Rated Repetitive Off-State Voltage VDRM: 400 V Off-State Leakage Current @ VDRM IDRM: 0.05 mA On-State RMS Current (It RMS): 0.8 A Gate Trigger Voltage (Vgt): 0.5 V Gate Trigger Current (Igt): 3 uA Holding Current (Ih Max): 5 mA Factory Pack Quantity: 1000 Other Names: 934056686412
- TEMEX [TEMEX] — HC49/S Crystal - Through Hole packaged
- TEMEX [TEMEX] — HC49/S Crystal - Through Hole packaged
- TEMEX [TEMEX] — HC49/S Crystal - Through Hole packaged