Результаты поиска B32522C3474J

Найдено 39 результатов.

• RJK03N9DNS-00-J5
  RENESAS [Renesas Technology Corp] — Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
• B32522C3474J289
  EPCOS (TDK) — CAP FILM 0.47UF 5% 250VDC RADIAL
• RJK03E3DNS-00-J5
  Renesas Electronics —
• RJK03E2DNS-00-J5
  Renesas Electronics —
• RJK03E1DNS-00#J5
  Renesas Electronics — Renesas Electronics RJK03E1DNS-00#J5 Channel Type: N-Channel Drain-to-Source Voltage [Vdss]: 30 V Drain-Source On Resistance-Max: 6.9 mО© Qg Gate Charge: 10.7 nC Rated Power Dissipation: 15 W
• RJK03E0DNS-00-J5
  Renesas Electronics —
• RJK0226DNS-00-J5
  Renesas Electronics —
• RJK0225DNS-00-J5
  Renesas Electronics —
• RJK0223DNS-00-J5
  Renesas Electronics —
• RJK0222DNS-00-J5
  Renesas Electronics —