Результаты поиска 4N35
Найдено 170 результатов.
- Fairchild Semiconductor — Fairchild Semiconductor 4N35SR2M_F132 Configuration: 1 Channel Current Transfer Ratio: 100 % Input Type: DC Maximum Collector Emitter Saturation Voltage: 300 mV Maximum Collector Emitter Voltage: 30 V Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 60 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 6 V Minimum Operating Temperature: - 40 C Output Device: Phototransistor Package / Case: SMT-6 Product Category: Transistor Output Optocouplers RoHS: yes Isolation Voltage: 7500 Vrms Number of Channels per Chip: 1 Channel Factory Pack Quantity: 1000
- Fairchild Semiconductor — Fairchild Semiconductor 4N35SR2M_F132 Configuration: 1 Channel Current Transfer Ratio: 100 % Input Type: DC Maximum Collector Emitter Saturation Voltage: 300 mV Maximum Collector Emitter Voltage: 30 V Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 60 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 6 V Minimum Operating Temperature: - 40 C Output Device: Phototransistor Package / Case: SMT-6 Product Category: Transistor Output Optocouplers RoHS: yes Isolation Voltage: 7500 Vrms Number of Channels per Chip: 1 Channel Factory Pack Quantity: 1000
- Baumer —
- TOSHIBA Semiconductor — TOSHIBA Semiconductor 4N35(SHORT,F) Product Category: Transistor Output Optocouplers RoHS: yes Maximum Collector Emitter Voltage: 30 V Maximum Collector Emitter Saturation Voltage: 0.3 V Isolation Voltage: 2500 Vrms Current Transfer Ratio: 100 % Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 60 mA Maximum Power Dissipation: 300 mW Maximum Operating Temperature: + 100 C Minimum Operating Temperature: - 55 C Package / Case: PDIP-6 Forward Current: 10 mA Maximum Reverse Diode Voltage: 6 V Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Output Type: DC Factory Pack Quantity: 50
- TOSHIBA Semiconductor — TOSHIBA Semiconductor 4N35(SHORT,F) Product Category: Transistor Output Optocouplers RoHS: yes Maximum Collector Emitter Voltage: 30 V Maximum Collector Emitter Saturation Voltage: 0.3 V Isolation Voltage: 2500 Vrms Current Transfer Ratio: 100 % Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 60 mA Maximum Power Dissipation: 300 mW Maximum Operating Temperature: + 100 C Minimum Operating Temperature: - 55 C Package / Case: PDIP-6 Forward Current: 10 mA Maximum Reverse Diode Voltage: 6 V Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Output Type: DC Factory Pack Quantity: 50
- Matsuo Electric — Matsuo Electric 204N3502334K3F Mfr Package Description: RADIAL LEADED, ROHS COMPLIANT Lead Free: Yes EU RoHS Compliant: Yes Terminal Finish: NOT SPECIFIED Mounting Feature: THROUGH HOLE MOUNT Manufacturer Series: 204 Operating Temperature-Max: 85 Cel Operating Temperature-Min: -55 Cel Capacitance: 0.3300 uF Package Shape: DISK PACKAGE Capacitor Type: SOLID Terminal Shape: WIRE Negative Tolerance: 10 % Positive Tolerance: 10 % Rated DC Voltage (URdc): 35 V Polarity: POLARIZED Tan Delta: 0.04 Leakage Current: 0.5uA
- Matsuo Electric — Matsuo Electric 204N3502155KCF Mfr Package Description: RADIAL LEADED, ROHS COMPLIANT Lead Free: Yes EU RoHS Compliant: Yes Terminal Finish: NOT SPECIFIED Mounting Feature: THROUGH HOLE MOUNT Manufacturer Series: 204 Operating Temperature-Max: 85 Cel Operating Temperature-Min: -55 Cel Capacitance: 1.5 uF Package Shape: DISK PACKAGE Capacitor Type: SOLID Terminal Shape: WIRE Negative Tolerance: 10 % Positive Tolerance: 10 % Rated DC Voltage (URdc): 35 V Polarity: POLARIZED Tan Delta: 0.06 Leakage Current: 0.5uA
- Glenair — Glenair MS27477Y14N35P RoHS: yes MIL Type: MIL-DTL-38999 II Series: MS Product Type: Receptacles Shell Size: 14 Shell Style: Jam Nut Contact Gender: Pin (Male) Insert Arrangement: 14-35 Mounting Angle: Straight Termination Style: Solder
- Glenair — Glenair MS27475Y14N35P RoHS: yes MIL Type: MIL-DTL-38999 II Product Type: Connectors
- Catalyst Semiconductor —
