Результаты поиска BSS138

Найдено 129 результатов.

• BSS138LT1_09
  ON Semiconductor —
• BSS138LT1_11
  ON Semiconductor —
• BSS138LT1_05
  ON Semiconductor —
• BSS138PW,115
  NXP Semiconductors — NXP Semiconductors BSS138PW,115 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Continuous Drain Current: 320 mA Resistance Drain-Source RDS (on): 1.6 Ohms Mounting Style: SMD/SMT Package / Case: SOT-323 Forward Transconductance gFS (Max / Min): 700 mS Gate Charge Qg: 0.8 nC Power Dissipation: 260 mW Factory Pack Quantity: 3000 Other Names: 934064987115
• BSS138BK,215
  NXP Semiconductors — NXP Semiconductors BSS138BK,215 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Continuous Drain Current: 360 mA Resistance Drain-Source RDS (on): 1.6 Ohms Mounting Style: SMD/SMT Package / Case: SOT-23 Forward Transconductance gFS (Max / Min): 700 mS Gate Charge Qg: 0.7 nC Power Dissipation: 350 mW Factory Pack Quantity: 3000 Lifecycle Status: Active Alternative: PHILIPS BSS138BK,215,NXP BSS138BK,215,PHIL BSS138BK,215,PHILLIPS BSS138BK,215,PHI BSS138BK,215,PHILIP BSS138BK,215,PHILIPS/NXP BSS138BK,215,PHILIPS SEMICONDUCTORS BSS138BK,215,Philips Semiconductor BSS138BK,215,PHILIPS SEMI BSS138BK,215,PHILPS BSS138BK,215,PHILIPS COMPONENTS BSS138BK,215,NXP SEMI BSS138BK,215,PHL BSS138BK,215,NXP/PHILIPS BSS138BK,215,PHY BSS138BK,215,PHILIPS ECG BSS138BK,215,PHLIPS BSS138BK,215,ERO BSS138BK,215,PHILL BSS138BK,215,PHYC BSS138BK,215,PHILLIP BSS138BK,215,PHIL/SIG BSS138BK,215,PHILI BSS138BK,215,RFT BSS138BK,215,Philips Semiconductors BSS138BK,215
• BSS138-TP-HF
  MCC (Micro Commercial Components) — MCC (Micro Commercial Components) BSS138-TP-HF Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• BSS138NL6327
  Infineon Technologies — Infineon Technologies BSS138NL6327 Mfr Package Description: ROHS COMPLIANT, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2300 A Feedback Cap-Max (Crss): 3.8 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 3.5 ohm
• BSS138NH6327
  Infineon Technologies —
• BSS138NE6433
  Infineon Technologies — Infineon Technologies BSS138NE6433 Mfr Package Description: GREEN, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2300 A Feedback Cap-Max (Crss): 3.8 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 3.5 ohm
• BSS138NE6327
  Infineon Technologies —