Результаты поиска BC557

Найдено 124 результатов.

• BC557B_J35Z
  Fairchild Semiconductor — TRANS PNP EPTXL 45V 100MA TO-92
• BC557AZL1G
  ON Semiconductor — TRANS AMP PNP 45V 100MA TO-92
• BC557C,126
  NXP Semiconductors — NXP Semiconductors BC557C,126 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933650090126, BC557C AMO
• BC557C,112
  NXP Semiconductors — NXP Semiconductors BC557C,112 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933650090112, BC557C
• BC557B,126
  NXP Semiconductors — NXP Semiconductors BC557B,126 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933202620126, BC557B AMO
• BC557B,116
  NXP Semiconductors — NXP Semiconductors BC557B,116 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933202620116, BC557B T/R
• BC557B,112
  NXP Semiconductors — NXP Semiconductors BC557B,112 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933202620112, BC557BP
• BC557AD27Z
  Fairchild Semiconductor — Fairchild Semiconductor BC557AD27Z Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 0.5000 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 110 Collector Current-Max (IC): 0.1000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 150 MHz
• BC557B_D74Z
  Fairchild Semiconductor — Fairchild Semiconductor BC557B_D74Z Collector- Base Voltage Vcbo: 50 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 150 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V
• BC557B_D74Z
  Fairchild Semiconductor — Fairchild Semiconductor BC557B_D74Z Collector- Base Voltage Vcbo: 50 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 150 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V