SIA427DJ-T1-GE3 datasheet
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О ДАТАШИТЕ
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МаркировкаSIA427DJ-T1-GE3
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Производитель
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ОписаниеVishay Intertechnology SIA427DJ-T1-GE3 Configuration: Single Continuous Drain Current: - 12 A Current - Continuous Drain (id) @ 25?° C: 12A Drain To Source Voltage (vdss): 8V Drain-source Breakdown Voltage: - 8 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 37 S Gate Charge (qg) @ Vgs: 50nC @ 5V Gate Charge Qg: 33 nC Gate-source Breakdown Voltage: 5 V ID_COMPONENTS: 1715975 Input Capacitance (ciss) @ Vds: 2300pF @ 4V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: PowerPAK?® SC-70-6 Power - Max: 19W Power Dissipation: 3.5 W Rds On (max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V Resistance Drain-source Rds (on): 0.013 Ohms Series: TrenchFET?® Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 800mV @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: - 8 V Gate-Source Breakdown Voltage: 5 V Resistance Drain-Source RDS (on): 0.013 Ohms Forward Transconductance gFS (Max / Min): 37 S Part # Aliases: SIA427DJ-GE3 Other Names: SIA427DJ-T1-GE3TR
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Количество страниц7 шт.
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Форматы файлаHTML, PDF
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