SI9945BDY-T1-GE3 datasheet

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О ДАТАШИТЕ

• Маркировка
  SI9945BDY-T1-GE3
• Производитель
  Siliconix
• Описание
  Vishay Intertechnology SI9945BDY-T1-GE3 Channel Mode: Enhancement Configuration: Dual Dual Drain Continuous Drain Current: 4.3 A Drain-source Breakdown Voltage: 60 V Drain-source On-res: 0.058Ohm Drain-source On-volt: 60V Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): ?±20V ID_COMPONENTS: 1950818 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Style: SMD/SMT Number Of Elements: 2 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Package / Case: SOIC-8 Narrow Package Type: SOIC N Pin Count: 8 Polarity: N Power Dissipation: 2000 mW Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V Transistor Polarity: N-Channel Type: Power MOSFET Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.058 Ohms Fall Time: 10 ns Rise Time: 65 ns, 15 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 15 ns, 20 ns Part # Aliases: SI9945BDY-GE3
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

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