SUP90N04-3M3P-GE3 datasheet

Маркировка

SUP90N04-3M3P-GE3
Производитель

Vishay Intertechnology
Описание

Vishay Intertechnology SUP90N04-3M3P-GE3 Continuous Drain Current Id: 90A Current - Continuous Drain (id) @ 25?° C: 90A Drain Source Voltage Vds: 40V Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 131nC @ 10V ID_COMPONENTS: 2668391 Mounting Type: Through Hole On Resistance Rds(on): 0.0027ohm Package / Case: TO-220-3 Power - Max: 3.1W Power Dissipation: RoHS Compliant Power Dissipation Pd: 125W Rds On (max) @ Id, Vgs: 3.3 mOhm @ 22A, 10V Rds(on) Test Voltage Vgs: 10V Rohs Compliant: Yes Series: TrenchFET?® Transistor Polarity: N Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA Voltage Vgs Max: 20V Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 90 A Resistance Drain-Source RDS (on): 0.0033 Ohms at 10 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Other Names: SUP90N04-3M3P-GE3TR
Количество страниц

6 шт.
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106,12 KB