2SK2968(F,T) datasheet

Маркировка

2SK2968(F,T)
Производитель

TOSHIBA Semiconductor
Описание

TOSHIBA Semiconductor 2SK2968(F,T) Configuration: Single Continuous Drain Current: 10 A Current - Continuous Drain (id) @ 25?° C: 10A Drain To Source Voltage (vdss): 900V Drain-source Breakdown Voltage: 900 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 70nC @ 10V Gate Charge Qg: 70 nC Input Capacitance (ciss) @ Vds: 2150pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-16C1B (TO-247 N) Power - Max: 150W Power Dissipation: 150 W Rds On (max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V Resistance Drain-source Rds (on): 1.25 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 900 V Resistance Drain-Source RDS (on): 1.25 Ohms Fall Time: 120 ns Rise Time: 60 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 25 ns Other Names: 2SK2968FT
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6 шт.
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