SUP90N10-8M8P-E3 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

О ДАТАШИТЕ

• Маркировка
  SUP90N10-8M8P-E3
• Производитель
  Siliconix
• Описание
  Siliconix SUP90N10-8M8P-E3 Configuration: Single Continuous Drain Current: 90 A Current Id Max: 90A Drain Source Voltage Vds: 100V Drain-source Breakdown Voltage: 100 V Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT On State Resistance: 8.8mohm Operating Temperature: RoHS Compliant Package / Case: TO-263 Power Dissipation: 3.75W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.0088 Ohms Transistor Polarity: N Channel Voltage Vgs Max: 20V Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0088 Ohms Fall Time: 9 ns Rise Time: 17 ns Factory Pack Quantity: 500 Typical Turn-Off Delay Time: 34 ns
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

Скачать datasheet SUP90N10-8M8P-E3.pdf
Файл формата Pdf 89,26 KB