Siliconix SUP60N02-4M5P-E3 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 60 A Resistance Drain-Source RDS (on): 0.0045 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Package / Case: TO-220AB Fall Time: 8 ns Minimum Operating Temperature: - 55 C Power Dissipation: 3.75 W Rise Time: 7 ns Factory Pack Quantity: 500 Typical Turn-Off Delay Time: 35 ns