SI4102DY-T1-GE3 datasheet

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• Маркировка
  SI4102DY-T1-GE3
• Производитель
  Siliconix
• Описание
  Vishay Intertechnology SI4102DY-T1-GE3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 2.7 A Current - Continuous Drain (id) @ 25?° C: 3.8A Drain Source Voltage Vds: 100V Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 11nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1716215 Input Capacitance (ciss) @ Vds: 370pF @ 50V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 130mohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 4.8W Power Dissipation: 2.4 W Rds On (max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.158 Ohms Rohs Compliant: Yes Series: TrenchFET?® Transistor: RoHS Compliant Transistor Case Style: SOIC Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250?µA Voltage Vgs Max: 20V Other Names: SI4102DY-T1-GE3TR
• Количество страниц
  10 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  172,07 KB

SI4102DY-T1-GE3 datasheet скачать

SI4102DY-T1-GE3 datasheet