SI1539CDL-T1-GE3 datasheet

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• Маркировка
  SI1539CDL-T1-GE3
• Производитель
  Siliconix
• Описание
  Siliconix SI1539CDL-T1-GE3 Configuration: Dual Continuous Drain Current: 0.7 A, - 0.5 A Drain-source Breakdown Voltage: +/- 30 V Fall Time: 15 ns, 10 ns Forward Transconductance Gfs (max / Min): 1.2 S, 0.6 S Gate Charge Qg: 1 nC Gate-source Breakdown Voltage: 20 V Mounting Style: SMD/SMT Package / Case: SC-70-6 Part # Aliases: SI1539CDL-GE3 Power Dissipation: 0.34 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.323 Ohms, 0.388 Ohms Rise Time: 25 ns, 19 ns Rohs: yes Transistor Polarity: N and P-Channel Typical Turn-off Delay Time: 14 ns, 4 ns RoHS: yes Drain-Source Breakdown Voltage: +/- 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.323 Ohms, 0.388 Ohms Forward Transconductance gFS (Max / Min): 1.2 S, 0.6 S Typical Turn-Off Delay Time: 14 ns, 4 ns
• Количество страниц
  16 шт.
• Формат
  PDF

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• Размер файла
  234,62 KB

SI1539CDL-T1-GE3 datasheet скачать

SI1539CDL-T1-GE3 datasheet