STP23NM50N datasheet

Маркировка

STP23NM50N
Производитель

STMicroelectronics
Описание

STMicroelectronics STP23NM50N Configuration: Single Continuous Drain Current: 17 A Current - Continuous Drain (id) @ 25?° C: 17A Drain To Source Voltage (vdss): 500V Drain-source Breakdown Voltage: 500 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 45nC @ 10V Gate-source Breakdown Voltage: 25 V Input Capacitance (ciss) @ Vds: 1330pF @ 50V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220-3 Formed Leads Power - Max: 125W Power Dissipation: 125 W Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Resistance Drain-source Rds (on): 0.162 Ohms Series: MDmesh?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: 25 V Resistance Drain-Source RDS (on): 0.162 Ohms Other Names: 497-10883-5
Количество страниц

21 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

370,06 KB