STP210N75F6 datasheet

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О ДАТАШИТЕ

• Маркировка
  STP210N75F6
• Производитель
  STMicroelectronics
• Описание
  STMicroelectronics STP210N75F6 Current - Continuous Drain (id) @ 25?° C: 120A Drain To Source Voltage (vdss): 75V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 171nC @ 10V Input Capacitance (ciss) @ Vds: 11800pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Through Hole Package / Case: TO-220-3 Power - Max: 300W Rds On (max) @ Id, Vgs: 3.7 mOhm @ 60A, 10V Series: STripFET?„? DeepGATE?„? Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 120 A Resistance Drain-Source RDS (on): 3.7 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Minimum Operating Temperature: - 55 C Power Dissipation: 300 W
• Количество страниц
  13 шт.
• Форматы файла
  HTML, PDF

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Файл формата Pdf 163,91 KB