STP18N55M5 datasheet

Маркировка

STP18N55M5
Производитель

STMicroelectronics
Описание

STMicroelectronics STP18N55M5 Continuous Drain Current Id: 14A Current - Continuous Drain (id) @ 25?° C: 14A Drain Source Voltage Vds: 600V Drain To Source Voltage (vdss): 550V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Mounting Type: Through Hole On Resistance Rds(on): 0.18ohm Package / Case: * Power: RoHS Compliant Power - Max: 90W Rds On (max) @ Id, Vgs: 210 mOhm @ 7A, 10V Rds(on) Test Voltage Vgs: 10V Series: MDmesh?„? Threshold Voltage Vgs Typ: 4V Transistor Polarity: N Channel Vgs(th) (max) @ Id: 5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 550 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 13 A Resistance Drain-Source RDS (on): 240 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Fall Time: 13 ns Gate Charge Qg: 31 nC Minimum Operating Temperature: - 55 C Power Dissipation: 90 W Rise Time: 9.5 ns Typical Turn-Off Delay Time: 29 ns Other Names: 497-10963-5
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