STP15N80K5 datasheet

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О ДАТАШИТЕ

• Маркировка
  STP15N80K5
• Производитель
  STMicroelectronics
• Описание
  STMicroelectronics STP15N80K5 Configuration: Single Continuous Drain Current: 14 A Drain-source Breakdown Voltage: 800 V Fall Time: 10 ns Gate Charge Qg: 32 nC Gate-source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220 Power Dissipation: 190 W Resistance Drain-source Rds (on): 0.3 Ohms Rise Time: 17.6 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 44 ns RoHS: yes Drain-Source Breakdown Voltage: 800 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.3 Ohms Typical Turn-Off Delay Time: 44 ns
• Количество страниц
  22 шт.
• Форматы файла
  HTML, PDF

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