STP10NM50N datasheet

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• Маркировка
  STP10NM50N
• Производитель
  STMicroelectronics
• Описание
  STMicroelectronics STP10NM50N Configuration: Single Continuous Drain Current: 7 A Current - Continuous Drain (id) @ 25?° C: 7A Drain To Source Voltage (vdss): 500V Drain-source Breakdown Voltage: 500 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 17nC @ 10V Input Capacitance (ciss) @ Vds: 450pF @ 50V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220-3 (Formed Leads) Power - Max: 70W Power Dissipation: 70 W Rds On (max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V Resistance Drain-source Rds (on): 0.63 Ohms Series: MDmesh?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 500 V Resistance Drain-Source RDS (on): 0.63 Ohms Other Names: 497-10770-5
• Количество страниц
  18 шт.
• Формат
  PDF

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• Размер файла
  336,75 KB

STP10NM50N datasheet скачать

STP10NM50N datasheet