STB24NM60N datasheet

Маркировка

STB24NM60N
Производитель

STMicroelectronics
Описание

STMicroelectronics STB24NM60N Current - Continuous Drain (id) @ 25?° C: 17A Drain To Source Voltage (vdss): 600V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 46nC @ 10V Input Capacitance (ciss) @ Vds: 1400pF @ 50V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: TO-263-3, D??Pak (2 leads + Tab), TO-263AB Power - Max: 125W Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V Series: MDmesh?„? Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 17 A Resistance Drain-Source RDS (on): 0.168 Ohms Mounting Style: SMD/SMT Fall Time: 37 ns Gate Charge Qg: 46 nC Power Dissipation: 125 W Rise Time: 16.5 ns Other Names: 497-11211-2
Количество страниц

15 шт.
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