STB21N90K5 datasheet

Маркировка

STB21N90K5
Производитель

STMicroelectronics
Описание

STMicroelectronics STB21N90K5 Continuous Drain Current: 18.5 A Drain-source Breakdown Voltage: 900 V Gate-source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: D2-PAK Power Dissipation: 250 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.299 Ohms Rohs: yes Transistor Polarity: N-Channel Lead-Free Status: Lead Free RoHS: Compliant Alternative: ST MICRO STB21N90K5,STM STB21N90K5,SGS STB21N90K5,SGS THOMSON STB21N90K5,WSI STB21N90K5,THOMSON STB21N90K5,INMOS STB21N90K5,ST8 STB21N90K5,WAFERSCALE STB21N90K5,SGS THOMPSON STB21N90K5,SESCOSEM STB21N90K5,STMICR STB21N90K5,THOMS STB21N90K5,SGS-ATES STB21N90K5,ST MICROELECTRONICS SEMI STB21N90K5,ST/SGS STB21N90K5,SGST STB21N90K5,FAROUDJA STB21N90K5,WAFERSCALE INTEGRATION INC STB21N90K5,STMicroelect STB21N90K5,ST MIC STB21N90K5,STMICROE STB21N90K5,SGS/ST STB21N90K5,SGS THOMP STB21N90K5,STMICROEL STB21N90K5 Drain-Source Breakdown Voltage: 900 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.299 Ohms
Количество страниц

22 шт.
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