STB18N55M5 datasheet

Маркировка

STB18N55M5
Производитель

STMicroelectronics
Описание

STMicroelectronics STB18N55M5 Current - Continuous Drain (id) @ 25?° C: 13A Drain To Source Voltage (vdss): 550V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 31nC @ 10V Input Capacitance (ciss) @ Vds: 1352pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: * Package / Case: * Power - Max: 90W Rds On (max) @ Id, Vgs: 240 mOhm @ 6.5A, 10V Series: MDmesh?„? Vgs(th) (max) @ Id: 5V @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 550 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: 13 A Resistance Drain-Source RDS (on): 0.18 Ohms Mounting Style: SMD/SMT Fall Time: 13 ns Gate Charge Qg: 31 nC Power Dissipation: 90 W Rise Time: 9.5 ns
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22 шт.
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