STB16N65M5 datasheet

Маркировка

STB16N65M5
Производитель

STMicroelectronics
Описание

STMicroelectronics STB16N65M5 Configuration: Single Continuous Drain Current: 12 A Current - Continuous Drain (id) @ 25?° C: 12A Drain To Source Voltage (vdss): 650V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 31nC @ 10V Gate Charge Qg: 31 nC Gate-source Breakdown Voltage: 25 V Input Capacitance (ciss) @ Vds: 1250pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 90W Power Dissipation: 90 W Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V Resistance Drain-source Rds (on): 0.27 Ohms Series: MDmesh?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA
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