STB15N80K5 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  STB15N80K5
• Производитель
  STMicroelectronics
• Описание
  STMicroelectronics STB15N80K5 Configuration: Single Continuous Drain Current: 14 A Drain-source Breakdown Voltage: 800 V Fall Time: 10 ns Gate Charge Qg: 32 nC Gate-source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: D2PAK Power Dissipation: 190 W Resistance Drain-source Rds (on): 0.3 Ohms Rise Time: 17.6 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 44 ns RoHS: yes Drain-Source Breakdown Voltage: 800 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.3 Ohms Typical Turn-Off Delay Time: 44 ns
• Количество страниц
  22 шт.
• Формат
  PDF

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• Размер файла
  440,18 KB

STB15N80K5 datasheet скачать

STB15N80K5 datasheet