STB120N4LF6 datasheet

Маркировка

STB120N4LF6
Производитель

STMicroelectronics
Описание

STMicroelectronics STB120N4LF6 Configuration: Single Continuous Drain Current: 80 A Current - Continuous Drain (id) @ 25?° C: 80A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 80nC @ 10V Gate Charge Qg: 80 nC Input Capacitance (ciss) @ Vds: 4300pF @ 25V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 110W Power Dissipation: 110 W Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V Resistance Drain-source Rds (on): 4 mOhms Series: STripFET?„? DeepGATE?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Resistance Drain-Source RDS (on): 4 mOhms Other Names: 497-11096-2
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18 шт.
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302,87 KB