STB120N4F6 datasheet

Маркировка

STB120N4F6
Производитель

STMicroelectronics
Описание

STMicroelectronics STB120N4F6 Configuration: Single Continuous Drain Current: 80 A Current - Continuous Drain (id) @ 25?° C: 80A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 65nC @ 10V Gate Charge Qg: 65 nC Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 3850pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-263-3, D??Pak (2 leads + Tab), TO-263AB Power - Max: 110W Power Dissipation: 110 W Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V Resistance Drain-source Rds (on): 4 mOhms Series: STripFET?„? DeepGATE?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 4 mOhms Other Names: 497-10768-5
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