Rohm SH8M4TB1 Continuous Drain Current: 9 A Current - Continuous Drain (id) @ 25?° C: 9A, 7A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: N and P-Channel Forward Transconductance Gfs (max / Min): 7 S Gate Charge (qg) @ Vgs: 15nC @ 5V Input Capacitance (ciss) @ Vds: 1190pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 10V Resistance Drain-source Rds (on): 17 mOhms Series: - Transistor Polarity: N and P-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: SH8M4TB1TR