SH8K32TB1 datasheet
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О ДАТАШИТЕ
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МаркировкаSH8K32TB1
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Производитель
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ОписаниеRohm SH8K32TB1 Continuous Drain Current: 4.5 A Current - Continuous Drain (id) @ 25?° C: 4.5A Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: 2 N-Channel (Dual) Forward Transconductance Gfs (max / Min): 4 S Gate Charge (qg) @ Vgs: 10nC @ 5V Input Capacitance (ciss) @ Vds: 500pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V Resistance Drain-source Rds (on): 55 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: SH8K32TB1TR
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Количество страниц5 шт.
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Форматы файлаHTML, PDF
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