BA1L4M-A
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
BA1L4M-A datasheet
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МаркировкаBA1L4M-A
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ПроизводительRenesas Electronics
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ОписаниеRenesas Electronics BA1L4M-A Lead Free: Yes Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: THROUGH-HOLE Terminal Finish: NOT SPECIFIED Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN RESISTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.2500 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL Turn-on Time-Max (ton): 700 ns Turn-off Time-Max (toff): 6000 ns DC Current Gain-Min (hFE): 95 Collector Current-Max (IC): 0.1000 A Collector-emitter Voltage-Max: 50 V
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Количество страниц2 шт.
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Форматы файлаHTML, PDF
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