SI2304DS,215 datasheet

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• Маркировка
  SI2304DS,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors SI2304DS,215 Configuration: Single Continuous Drain Current: 1.7 A Current - Continuous Drain (id) @ 25?° C: 1.7A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 4.6nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951737 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 830mW Power Dissipation: 830 mW Rds On (max) @ Id, Vgs: 117 mOhm @ 500mA, 10V Resistance Drain-source Rds (on): 0.177 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 177 mOhms Fall Time: 7.5 ns Rise Time: 7.5 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18 ns Part # Aliases: SI2304DS T/R Other Names: 934056633215::SI2304DS T/R::SI2304DS T/R
• Количество страниц
  12 шт.
• Формат
  PDF

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• Размер файла
  105,42 KB

SI2304DS,215 datasheet скачать

SI2304DS,215 datasheet