PZT4401,115 datasheet

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Маркировка

PZT4401,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PZT4401,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 250MHz ID_COMPONENTS: 1949711 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.6 A Maximum Operating Frequency: 250 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.15W Power Dissipation: 1150 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.6 A Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 1 V, 20 at 0.1 mA at 1 V, 40 at 1 mA at 1 V, 80 at 10 mA at 1 V DC Current Gain hFE Max: 100 at 150 mA at 1 V Maximum Power Dissipation: 1150 mW Factory Pack Quantity: 1000 Part # Aliases: PZT4401 T/R Other Names: 568-2456-2, 934012100115, PZT4401 T/R
Количество страниц

7 шт.
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