PMST2907A,115 datasheet

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• Маркировка
  PMST2907A,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PMST2907A,115 Collector Current (dc) (max): 600mA Collector- Emitter Voltage Vceo Max: - 60 V Collector-base Voltage: 60V Collector-emitter Voltage: 60V Configuration: Single Continuous Collector Current: - 600 mA Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 75 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V Emitter- Base Voltage Vebo: - 5 V Emitter-base Voltage: 5V Frequency (max): 200MHz Frequency - Transition: 200MHz ID_COMPONENTS: 1949702 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 800 mA Maximum Operating Frequency: 200 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SC-70-3, SOT-323-3 Package Type: SC-70 Pin Count: 3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: - 60 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 800 mA Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 75 DC Current Gain hFE Max: 75 at 0.1 mA at 10 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: PMST2907A T/R Other Names: 934044580115::PMST2907A T/R::PMST2907A T/R
• Количество страниц
  8 шт.
• Формат
  PDF

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• Размер файла
  63,46 KB

PMST2907A,115 datasheet скачать

PMST2907A,115 datasheet